Silicon Photodetector and Germanium Photodetector
Hinds’ detection systems are specifically designed for use with high frequency optical signals including those generated in Photoelastic Modulator (PEM) applications.
Hinds’ detection features include:
Frequency response of DC to several times the operating frequency of the PEM being used, 400kHz - 1 MHz depending on the model
The DET-200 maintains a constant bandwidth throughout all gain settings
Gain Selection, 10 positions
The DET-200 exhibits a constant DC offset throughout all gain settings
Offset Voltage (all gain settings), < ± 5mV
Hi Z load from 0-10V and a 50Ω load from 0-5V
Power supply included
Optional standoffs for mounting a precision polarizer mount
The DET-200 dimensions are 2” x 2” x 1” and have a #8-32 tapped hole for post mounting. The following detectors are suitable for signals in the 0.05mW to 5 mW range. For lower signal levels Hinds developed our avalanche diode photodetector, the APD-100.
DET-200 Specifications
| Model | Type | Spectral Range (nm) | Active Area | Frequency Response | NEP w/√Hz |
|---|---|---|---|---|---|
| 002 | Si-PC | 350 - 1100 | 16 mm2 | DC - 1 MHz | 3.55e-12 |
| 004 | Si-PV | 350 - 1100 | 16 mm2 | DC - 1 MHz | 7.99e-12 |
| 006 | Si-PV | 200 - 1100 | 20 mm2 | DC - 400 kHz | 3.77e-11 |
| 007 | Ge-PV | 800 - 1600 | 3 mm2 | DC - 1 MHz | 1.17e-11 |
| 008 | Ge-PV | 800 - 1600 | 20 mm2 | DC - 1 MHz | 3.92e-11 |
Contact us for more information about our fast, sensitive photodetectors.
