Silicon Photodetector and Germanium Photodetector
Hinds’ detection systems are specifically designed for use with high frequency optical signals including those generated in Photoelastic Modulator (PEM) applications.
Hinds’ detection features include:
Frequency response of DC to several times the operating frequency of the PEM being used, 400kHz - 1 MHz depending on the model
The DET-200 maintains a constant bandwidth throughout all gain settings
Gain Selection, 10 positions
The DET-200 exhibits a constant DC offset throughout all gain settings
Offset Voltage (all gain settings), < ± 5mV
Hi Z load from 0-10V and a 50Ω load from 0-5V
Power supply included
Optional standoffs for mounting a precision polarizer mount
The DET-200 dimensions are 2” x 2” x 1” and have a #8-32 tapped hole for post mounting. The following detectors are suitable for signals in the 0.05mW to 6 mW range. For lower signal levels Hinds developed our avalanche diode photodetector, the APD-100.
|Model||Type||Spectral Range (nm)||Active Area||Frequency Response||NEP w/√Hz|
|002||Si-PC||350 - 1100||16 mm2||DC - 1 MHz||3.55e-12|
|004||Si-PV||350 - 1100||16 mm2||DC - 1 MHz||7.99e-12|
|006||Si-PV||200 - 1100||20 mm2||DC - 400 kHz||3.77e-11|
|007||Ge-PV||800 - 1600||3 mm2||DC - 1 MHz||1.17e-11|
|008||Ge-PV||800 - 1600||20 mm2||DC - 1 MHz||3.92e-11|
Contact us for more information about our fast, sensitive photodetectors.